Nanomechanical and Morphological Characterization of Tungsten Trioxide (WO3) Thin Films Grown by Atomic Layer Deposition
نویسندگان
چکیده
منابع مشابه
Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor
Highly uniform, smooth, and conformal coatings of tungsten nitride were synthesized by atomic layer deposition (ALD) from vapors of a novel precursor, bis(tert-butylimido)-bis(dimethylamido)tungsten, (BuN)2(Me2N)2W, and ammonia at low substrate temperatures (250-350 °C). This tungsten precursor is a low-viscosity, noncorrosive liquid with sufficient volatility at room temperature to be a vapor ...
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Tin oxide (SnO2) is a transparent semiconductor with a wide band gap and electrical resistivity as low as 2 10 4 Ω 3 cm and high infrared reflectivity, over 90%. 4 These properties are achieved using n-type doping by substituting fluorine for about 1% of the oxygen. The low electrical resistance and optical transparency in SnO2 are widely used in applications such as solar cells, displays, touc...
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The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 cm−1 originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the HfO2/SiO2 interface af...
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We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by q...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2015
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.0241509jss